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Statistical thermodynamics of electrons and holes in semiconductors.
J Chem Phys 1985 Aug; 83(3):1240-1245
A statistical thermodynamic treatment is presented for the formation of electrons and holes in nondegenerate semiconductors, and for the accompanying standard changes in the Gibbs energy g deg, entropy s deg, heat capacity c deg, and enthalpy h deg. The treatment leads to the derivation of a new form of the variation of g deg with temperature; i.e., g deg - g deg (at 0 k) = eg - eg (at 0 k) = at - bt 1n t, where eg is the forbidden band gap energy, and a and b are theoretically derivable constants, requiring relatively small adjustments for each semiconductor. Reliable data for si, ge, gaas and gap show that this equation and the derived properties s deg., C deg, and h deg. are well represented as functions of temperature. The foregoing equation is also useful in predicting the temperature dependence of eg from two values of eg at two different temperatures. The resulting interpretation of g deg. Indicates a distinct possibility that eg is constant below a characteristic temperature close to 0 k.
OP; Journal Article
Issue of Publication
The Journal of Chemical Physics
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