In-depth survey report: control technology for gallium arsenide processing at Morgan Semiconductor, Garland, Texas, report no. CT-163-15b.
Sheehy-JW; Lenihan-KL; Jones-JH
NIOSH 1994 Jun; :1-33
A survey was conducted to document and evaluate effective technologies for controlling hazardous exposures at Morgan Semiconductor (SIC-3674), Garland, Texas. The facility produced gallium-arsenide (GaAs) wafers, and GaAs wafers with epitaxial layers of gallium-aluminum-arsenide. Five process areas evaluated for arsenic (7440382) showed the personal exposures above the NIOSH recommended exposure limit of 2 micrograms/cubic meter and the OSHA action level of 5 micrograms/cubic meter. The cut off room had extremely high levels of arsenic, but the operator did wear an air supplied respirator. During LEC cleaning, the personal arsenic concentrations were higher. All arsine (7784421) - arsenic exposures in epitaxy were below the detection limit of the sampling and analytical method. Relatively high levels of arsenic surface contamination were found on the surfaces of the LEC puller. Area hydrogen-chloride (7647010) air concentrations in the ampoule loading room were high enough to warrant increasing the ventilation at the wet bench. Respirable free silica (14808607) levels were well controlled in the polishing room, suggesting low potential for silica exposures in this area. The authors recommend that the following measures be instituted: environmental monitoring, medical surveillance, posting of exposure areas, personal protective equipment and work clothing, employee training, work practices, sanitation practices and record keeping.
NIOSH-Author; NIOSH-Survey; Field-Study; CT-163-15b; Region-6; Control-technology; Semiconductors; Arsenic-compounds; Inorganic-acids; Occupational-exposure
7440-38-2; 7784-42-1; 7647-01-0; 14808-60-7
Control Technology; Field Studies
NTIS Accession No.
National Institute for Occupational Safety and Health