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Exposure and control assessment of semiconductor manufacturing.
AIP Conference Proceedings 166, Photovoltaic Safety, Denver, Colorado, 1988, E. Luft, Ed.; American Institute of Physics, New York 1988:44-53
A study was undertaken of worker exposures and control methods in place in 21 companies engaged in semiconductor manufacturing. Processes studied included photolithography, chemical vapor deposition, wet chemical etching and cleaning, plasma etching, diffusion, ion implantation, and metallization. While in most instances the results obtained were well below the recommended standards for routine operations, an exception was noted for radiofrequency radiation where there was a potential for over exposure in several instances. Attention also needed to be directed to continuous low level arsenic (7440382) exposures during ion implantation operations. Alarm set points were generally at 25 to 50 parts per billion, which was 50 to 100 times higher than the NIOSH recommended exposure level which was based on the carcinogenic effects of arsenic. While it is possible that routine exposures above the recommended levels could be occurring, the fact that the alarms were set so high meant that no indication that this exposure was occurring would be given. Mention was also made of the fact that several materials were difficult or impossible to monitor with readily available techniques, such as the speciation of different boron (7440428) or phosphorus (7723140) compounds, which is important as the toxicity of the various compounds varies widely.
Control-technology; Air-quality-control; Radiation-exposure; Electromagnetic-radiation; Carcinogens; Electronics-industry; Occupational-exposure; Workplace-studies
7440-38-2; 7440-42-8; 7723-14-0
AIP Conference Proceedings 166, Photovoltaic Safety, Denver, Colorado, 1988, E. Luft, Ed.; American Institute of Physics, New York
Page last reviewed: June 12, 2019
Content source: National Institute for Occupational Safety and Health Education and Information Division