Preliminary survey report: control technology for gallium arsenide processing at Honeywell, Inc., Richardson, Texas.
Cincinnati, OH: U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control, National Institute for Occupational Safety and Health, ECTB 163- 17A, 1987 Dec; :1-8
An evaluation was made of control technology at Honeywell, Inc., (SIC-3674) in Richardson, Texas, which was primarily involved in gallium-arsenide (1303000) wafer fabrication involving about 70 workers. Major hazards were potential chemical exposures to solvents, acids, and gases. Solvents and gases used most frequently included silane (7803625), selenium-hexafluoride (7783791), tetraethoxy-silane (78104), 1,2,4-trichlorobenzene (120821), fluorocarbon compounds, xylene (1330207), 1,1,1-trichloroethane (71556), and glycol ethers. Fabrication processes included cleaning and etching prior to silicon-nitride coating and ion implantation, photoresist applications using photolithography, epitaxial reactions for optoelectronic device production, oxidation, and metallization. Honeywell focussed primarily on ventilation for hazard control, including laminar flow hoods and reaction tubes for process isolation, and scrubbers for effluent gases. Continuous hydrogen monitoring was not done. Medical monitoring consisted of quarterly urine tests for arsenic (74403820). Protective clothing and safety goggles were used. Most training was on the job, and monthly safety meetings were held. The author concludes that since this facility does not engage in crystal growth and has no employee with substantial time to spend for health and safety, it is not recommended for inclusion in an in depth survey of gallium-arsenide safety issues.