Preliminary Survey Report: Control Technology for Gallium Arsenide Processing at Morgan Semiconductor Division, Garland, Texas.
NIOSH 1987 Mar; :1-8
A walk through survey was made of the Morgan Semiconductor Facility (SIC-3674) in Garland, Texas to evaluate control technology for gallium-arsenide (1303000) dust in the semiconductor industry. Engineering controls included the synthesis of gallium-arsenide outside the crystal pullers to reduce arsenic (7440382) residues in the pullers, also reducing worker exposure to arsenic during cleaning of the crystal pullers. A new system was being designed for cleaning the crystal pullers where a permanent vacuum would be placed in the puller to provide local exhaust. A dry box was employed in the Horizontal Bridgeman process to break up the gallium- arsenide crystal prior to loading the quartz ampoules. Thermocouple failure was identified as a major cause of emissions from the gallium-arsenide synthesis operation and subsequently a change was made in the preventive maintenance schedules to replace thermocouples more frequently. Work practices also contributed to lower worker exposures. Every evening the crystal pulling area and the crystal sawing areas were wet mopped and all surfaces wet wiped three times a week to prevent buildup of arsenic residues. A continuous monitoring program for arsine was carried out. Medical monitoring was performed on an annual basis. Workers wore appropriate protective equipment for crystal pulling and polishing activities. The author recommends this facility for an in depth survey to evaluate the control measures.
NIOSH-Author; NIOSH-Survey; Field-Study; CT-163-15a; Arsenic-compounds; Arsenic-poisoning; Semiconductors; Region-6
Field Studies; Control Technology
NTIS Accession No.
Division of Physical Sciences and Engineering, NIOSH, U.S. Department of Health and Human Services, Cincinnati, Ohio, Report No. CT-163-15a, 8 pages, 3 references