Preliminary Survey Report: Control Technology for Gallium Arsenide Processing at Microwave Semiconductor Corporation, Somerset, New Jersey.
The technology which is available to control hazardous substances in gallium-arsenide (1303000) applications is reviewed and evaluated in light of findings from a visit to the Microwave Semiconductor Corporation (SIC-3674) in Somerset, New Jersey. The facility has 500 employees, 64 being in the gallium-arsenide technical staff. Twelve operators and one foreman are employed in the wafer fabrication area. Direct ion implantation or epitaxial growth, photolithography, plasma etching, and backside wafer processing are used at the facility to fabricate a gallium-arsenide wafer. Hazards exist primarily in the numerous solvents, acids, and gases employed in wafer production. These include chlorobenzene (108907), methanol (67561), methyl-ethyl-ketone (78933), methyl-isobutyl-ketone (108101), ammonia (7664417), and silane (7803625). The use of arsine (7784421) gas will soon begin at the facility, which will also be hazardous to employees due to its extremely toxic properties. Class 1000 clean rooms are used for wafer fabrication and epitaxial growth operations. Most of the processing is done under Class 100 laminar flow doors. These clean rooms are on separate ventilation systems from the offices and conference rooms. Air enters the clean rooms through high efficiency particulate air filters. Ventilation rate in the epitaxy room is 5000 cfm, of which 500 cfm is return air. An environmental engineer tests for 70 hazardous chemicals in the work area, including hydrogen-fluoride (7664393), cyanide (57125), phosgene (75445), ammonia, formaldehyde (50000), arsine, and phenol (108952). The authors recommend the establishment of a program for air sampling to monitor arsenic levels and wipe sampling for arsenic surface contamination.
Division of Physical Sciences and Engineering, NIOSH, Engineering Control Technology Branch, Cincinnati, Ohio, CT-163-11a, 6 pages, 3 references