Skip directly to search Skip directly to A to Z list Skip directly to page options Skip directly to site content

NIOSHTIC-2 Publications Search

Search Results

Reflectance and Emittance of Spectrally Selective Titanium and Zirconium Nitrides.

Blickensderfer-RA; Lincoln-RL; Deardorff-DK
NTIS: PB 258 109 :24 pages
Several thin film absorber stacks with spectrally selective characteristics were developed by the Bureau of Mines. The stacks consisted of a silicon thick film or a zirconium compound thin film on a reflective thin film of silver. The zirconium absorber films, with the general formula zrcxoynz, were prepared by reactively sputtering zirconium or zirconium carbide in argon with small amounts of oxygen, nitrogen, or both, or by oxidizing zirconium films in air. A few similar types of films were prepared from titanium. The short-wave absorptance over the solar spectrum, a(s) and thermal emittance at 600 k, e(600 k), of the solar absorber stacks were calculated from room-temperature reflectance data. The values of a(s) ranaged from 0.47 to 0.93, E(600 k) from 0.49 To 0.034, and the ratio a(s) e(600 k) from 1.7 to 34. The specimen with the best combination of properties, a zrnx-ag stack, had a solar absorptance a(s) of 0.85 and a ratio, a(s)/e(600 k), of 24. The effect of film thickness and composition on spectral selectivity was determined. An emissometer for measuring normal total emittance up to 800 k and a method for determining a(s), e(t) (hemispherical), and a(s)/e(t) using simulated solar radiation are described. A calorimetric method for measuring a(s) and e(t) (hemispherical) at elevated temperature is also described. Measurements made on several specimens agreed favorably with calculated values.
Publication Date
Document Type
IH; Report of Investigation;
Fiscal Year
NTIS Accession No.
NTIS Price
Identifying No.
RI 8167
NIOSH Division
Source Name
NTIS: PB 258 109