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Recovering cadmium and tellurium from thin-film photovoltaic device scrap.

Authors
Tolley-WK; Palmer-GR
Source
Salt Lake City, UT: U.S. Department of the Interior, Bureau of Mines, RI 9588, 1995 Jan; :1-24
Link
NIOSHTIC No.
10005909
Abstract
The U.S. Bureau of Mines (USBM) is investigating hydrometallurgical processing techniques to recycle metals from semiconductors and other advanced materials. Cadmium amd tellurium were recovered from mixed CdTe/CdS scrap produced in the manufacture of thin-film photovoltaic devices. Leaching the scrap for 90 min at 110 deg. C in 2.2Normal H2SO4 under 400 psig O2 yielded 97% Cd extraction; however, cadmium content of the residue ranged between 4% and 7%. Soluble iron was added to the lixiviant to catalyze oxidation of the CdS component. Tellurium and sulfur remained in the leach residue primarily in the elemental form. The iron and tellurium were removed from the cadmium-rich leach liquor by adjusting the pH to 5.3. The cadmium was recovered as cadmium sulfate crystals by evaporating the solution. Alternative leaching and purification schemes are discussed.
Keywords
Semiconductors-materials; Materials-recovery; Thin-films; Photovoltaic-cells; Leaching; Purification; Hydrometallurgy; Metal-recycling; Cadmium; Tellurium
CAS No.
7440-43-9; 13494-80-9
Publication Date
19950101
Document Type
Report of Investigations
Fiscal Year
1995
NTIS Accession No.
PB96-125372
NTIS Price
A03
Identifying No.
RI-9588
NIOSH Division
SLRC
Source Name
Salt Lake City, UT: U.S. Department of the Interior, Bureau of Mines, RI 9588
State
UT
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