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Statistical thermodynamics of electrons and holes in semiconductors.

Authors
Gokcen-NA
Source
J Chem Phys 1985 Aug; 83(3):1240-1245
NIOSHTIC No.
10004708
Abstract
A statistical thermodynamic treatment is presented for the formation of electrons and holes in nondegenerate semiconductors, and for the accompanying standard changes in the Gibbs energy g deg, entropy s deg, heat capacity c deg, and enthalpy h deg. The treatment leads to the derivation of a new form of the variation of g deg with temperature; i.e., g deg - g deg (at 0 k) = eg - eg (at 0 k) = at - bt 1n t, where eg is the forbidden band gap energy, and a and b are theoretically derivable constants, requiring relatively small adjustments for each semiconductor. Reliable data for si, ge, gaas and gap show that this equation and the derived properties s deg., C deg, and h deg. are well represented as functions of temperature. The foregoing equation is also useful in predicting the temperature dependence of eg from two values of eg at two different temperatures. The resulting interpretation of g deg. Indicates a distinct possibility that eg is constant below a characteristic temperature close to 0 k.
CODEN
JCPSA6
Publication Date
19850801
Document Type
OP; Journal Article
Fiscal Year
1985
NTIS Accession No.
NTIS Price
Identifying No.
OP 61-85
Issue of Publication
3
ISSN
0021-9606
NIOSH Division
ALRC
Source Name
The Journal of Chemical Physics
State
OR
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