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Characterization of Hazardous-Gas Releases by Tracer-Gas Simulation.

Authors
Orcutt-JJ
Source
Hazard Assessment and Control Technology in Semiconductor Manufacturing, Lewis Publishers, Inc., Chelsea, Michigan 1989:213-225
Link
NIOSHTIC No.
00189067
Abstract
One of the major hazards in the semiconductor industry involved the possible exposure to hazardous gas releases. A method for toxic gas leak simulation and control effectiveness assessment was described in this report. Simulation of a gas leak was obtained using known amounts of sulfur-hexafluoride (SF6) tracer gas. Electron capture gas chromatography was used to analyze the surrounding atmospheres. Worst case scenarios were achieved by SF6 tracer gas being released at the same delivery pressure as in the hazardous gas line. The tracer gas delivery tubing was routed into the hazardous gas secondary containment. Air samples were taken from the workroom air immediately surrounding the secondary enclosure. The samples were taken at 1, 3, and 5 minutes following the release of the tracer gas. If no SF6 greater than background was detected in the air samples, secondary containment integrity was verified to a level of less than 100 parts per trillion hazardous gas contamination of work room air. Additional discussion was given to determining the best location for the gas detector sensor, cleaning rates, contamination recirculation, environmental testing, primary containment leak testing, and exhaust air flow determination.
Keywords
Semiconductors; Toxic-gases; Safety-research; Electronics-industry; Phosphorus-compounds; Air-sampling; Control-technology;
Publication Date
19890101
Fiscal Year
1989
NTIS Accession No.
NTIS Price
Priority Area
Control Technology and Personal Protective Equipment; Research Tools and Approaches; Control-technology;
Source Name
Hazard Assessment and Control Technology in Semiconductor Manufacturing, Lewis Publishers, Inc., Chelsea, Michigan
State
MI;
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